How do the specifications of PbS/PbSe detectors compare with standard and extended InGaAs?
(Note: These specifications are approximate figures that provide data for a general comparison).
| Temperature | Parameter | InGaAs (std.) | InGaAs (ext.) | PbS | PbSe |
| 300°K | λ range (µm) | 0.7 – 1.7 | 1.2 – 2.6 | 1.0 – 3.0 | 1.0 – 5.5 |
| 300°K | λ pk. (µm) | 1.5 | 2.3 | 2.2 | 3.8 |
| 300°K | τ (µS) | 0.1 | 0.1 | 200 | 3.0 |
| 300°K | D*λpk (cm√Hz/w) | 5 x 1012 | 5 x 1010 | 1 x 1011 | 3 x 109 |
| 300°K | Mode | PV | PV | PC | PC |
| Temperature | Parameter | InGaAs (std.) | InGaAs (ext.) | PbS | PbSe |
| 243°K | λ range (µm) | 0.7 – 1.7 | 1.2 – 2.6 | 0.8 – 3.5 | 1.0 – 5.5 |
| 243°K | λ pk. (µm) | 1.5 | 2.3 | 2.5 | 4.0 |
| 243°K | τ (µS) | 0.001 | 0.1 | 1000 | 10 |
| 243°K | D*λpk (cm√Hz/w) | 3 x 1013 | 2 x 1011 | 2 x 1011 | 1.5 x 1010 |
| 243°K | Mode | PV | PV | PC | PC |
(PV = photovoltaic, PC = photoconductive)
Source (with permission to reproduce): http://optodiode.com/resources.html